SURFACE TREATMENT METHOD OF WAFER AND COMPOSITION USED FOR SAID METHOD

A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming com...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: TERUI, Yoshiharu
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TERUI, Yoshiharu
description A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition. The water-repellent protective film-forming component consists of a compound of formula [1], and the solvent contains at least an acyclic carbonate.R1x(CH3)3-xSiN(R2)2  [1]R1 is selected from the group consisting of a H and a C1-C10 hydrocarbon group; x is an integer of 1 to 3; and R2 is each independently a group selected from the group consisting of methyl, ethyl and acetyl.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021009882A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021009882A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021009882A13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDqL-w4GzkMaljkdyRzMkkeSCYyklTqKF-v-49AOc3vL2ikvNjJZAMqEEigKBZEgOEsMDmTJgdGBTuKfixacItZADThkKerfto9o9p9faTpsHdWYSO1za8hnbukxze7fvWIvRptP61vcGu-t_6wdLUS0K</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SURFACE TREATMENT METHOD OF WAFER AND COMPOSITION USED FOR SAID METHOD</title><source>esp@cenet</source><creator>TERUI, Yoshiharu</creator><creatorcontrib>TERUI, Yoshiharu</creatorcontrib><description>A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition. The water-repellent protective film-forming component consists of a compound of formula [1], and the solvent contains at least an acyclic carbonate.R1x(CH3)3-xSiN(R2)2  [1]R1 is selected from the group consisting of a H and a C1-C10 hydrocarbon group; x is an integer of 1 to 3; and R2 is each independently a group selected from the group consisting of methyl, ethyl and acetyl.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; PREVENTION OF FOULING IN GENERAL ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210114&amp;DB=EPODOC&amp;CC=US&amp;NR=2021009882A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210114&amp;DB=EPODOC&amp;CC=US&amp;NR=2021009882A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TERUI, Yoshiharu</creatorcontrib><title>SURFACE TREATMENT METHOD OF WAFER AND COMPOSITION USED FOR SAID METHOD</title><description>A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition. The water-repellent protective film-forming component consists of a compound of formula [1], and the solvent contains at least an acyclic carbonate.R1x(CH3)3-xSiN(R2)2  [1]R1 is selected from the group consisting of a H and a C1-C10 hydrocarbon group; x is an integer of 1 to 3; and R2 is each independently a group selected from the group consisting of methyl, ethyl and acetyl.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w4GzkMaljkdyRzMkkeSCYyklTqKF-v-49AOc3vL2ikvNjJZAMqEEigKBZEgOEsMDmTJgdGBTuKfixacItZADThkKerfto9o9p9faTpsHdWYSO1za8hnbukxze7fvWIvRptP61vcGu-t_6wdLUS0K</recordid><startdate>20210114</startdate><enddate>20210114</enddate><creator>TERUI, Yoshiharu</creator><scope>EVB</scope></search><sort><creationdate>20210114</creationdate><title>SURFACE TREATMENT METHOD OF WAFER AND COMPOSITION USED FOR SAID METHOD</title><author>TERUI, Yoshiharu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021009882A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TERUI, Yoshiharu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TERUI, Yoshiharu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SURFACE TREATMENT METHOD OF WAFER AND COMPOSITION USED FOR SAID METHOD</title><date>2021-01-14</date><risdate>2021</risdate><abstract>A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition. The water-repellent protective film-forming component consists of a compound of formula [1], and the solvent contains at least an acyclic carbonate.R1x(CH3)3-xSiN(R2)2  [1]R1 is selected from the group consisting of a H and a C1-C10 hydrocarbon group; x is an integer of 1 to 3; and R2 is each independently a group selected from the group consisting of methyl, ethyl and acetyl.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2021009882A1
source esp@cenet
subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CLEANING
CLEANING IN GENERAL
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
TRANSPORTING
title SURFACE TREATMENT METHOD OF WAFER AND COMPOSITION USED FOR SAID METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T11%3A34%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TERUI,%20Yoshiharu&rft.date=2021-01-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021009882A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true