SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus includes an inner wall formed of a heat conductive material, a quartz liner that covers the inner wall, and a cooling unit that cools the inner wall. A gap is formed between the inner wall and the quartz liner, and a sealing member is provided in the gap to seal the...
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creator | Kikuchi, Takaaki Son, Ryou Kondo, Hiroyuki Sasaki, Sinya Tamaraya, Syuntaro |
description | A substrate processing apparatus includes an inner wall formed of a heat conductive material, a quartz liner that covers the inner wall, and a cooling unit that cools the inner wall. A gap is formed between the inner wall and the quartz liner, and a sealing member is provided in the gap to seal the gap. The gap is filled with a heat conductive medium. |
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A gap is formed between the inner wall and the quartz liner, and a sealing member is provided in the gap to seal the gap. The gap is filled with a heat conductive medium.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210107&DB=EPODOC&CC=US&NR=2021005477A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210107&DB=EPODOC&CC=US&NR=2021005477A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kikuchi, Takaaki</creatorcontrib><creatorcontrib>Son, Ryou</creatorcontrib><creatorcontrib>Kondo, Hiroyuki</creatorcontrib><creatorcontrib>Sasaki, Sinya</creatorcontrib><creatorcontrib>Tamaraya, Syuntaro</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS</title><description>A substrate processing apparatus includes an inner wall formed of a heat conductive material, a quartz liner that covers the inner wall, and a cooling unit that cools the inner wall. 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The gap is filled with a heat conductive medium.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBvMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDI0MDA1MTc3NHQ2PiVAEAXrYinA</recordid><startdate>20210107</startdate><enddate>20210107</enddate><creator>Kikuchi, Takaaki</creator><creator>Son, Ryou</creator><creator>Kondo, Hiroyuki</creator><creator>Sasaki, Sinya</creator><creator>Tamaraya, Syuntaro</creator><scope>EVB</scope></search><sort><creationdate>20210107</creationdate><title>SUBSTRATE PROCESSING APPARATUS</title><author>Kikuchi, Takaaki ; Son, Ryou ; Kondo, Hiroyuki ; Sasaki, Sinya ; Tamaraya, Syuntaro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021005477A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Kikuchi, Takaaki</creatorcontrib><creatorcontrib>Son, Ryou</creatorcontrib><creatorcontrib>Kondo, Hiroyuki</creatorcontrib><creatorcontrib>Sasaki, Sinya</creatorcontrib><creatorcontrib>Tamaraya, Syuntaro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kikuchi, Takaaki</au><au>Son, Ryou</au><au>Kondo, Hiroyuki</au><au>Sasaki, Sinya</au><au>Tamaraya, Syuntaro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS</title><date>2021-01-07</date><risdate>2021</risdate><abstract>A substrate processing apparatus includes an inner wall formed of a heat conductive material, a quartz liner that covers the inner wall, and a cooling unit that cools the inner wall. A gap is formed between the inner wall and the quartz liner, and a sealing member is provided in the gap to seal the gap. The gap is filled with a heat conductive medium.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | SUBSTRATE PROCESSING APPARATUS |
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