THREE-DIMENSIONAL MEMORY DEVICE CONTAINING THROUGH-ARRAY CONTACT VIA STRUCTURES BETWEEN DIELECTRIC BARRIER WALLS AND METHODS OF MAKING THE SAME

An alternating layer stack of insulating layers and sacrificial material layers is formed over a semiconductor substrate, and memory stack structures are formed through the vertically-alternating layer stack. A pair of unconnected barrier trenches or a moat trench is formed through the alternating s...

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Bibliographische Detailangaben

Hauptverfasser:	HOJO, Naoto, OTSU, Yoshitaka, NOZAWA, Kei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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