HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY

HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY

The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a low voltage region and a high voltage region are integrated in a substrate. A low voltage transistor device is disposed in the low voltage region and comprises a low voltage gate electrode...

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Hauptverfasser: Fan, Fu-Jier, Tuan, Hsiao-Chin, Thei, Kong-Beng, Chen, Yi-Sheng, Chou, Chien-Chih, Chen, Yi-Huan, Kalnitsky, Alexander
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Fan, Fu-Jier
Tuan, Hsiao-Chin
Thei, Kong-Beng
Chen, Yi-Sheng
Chou, Chien-Chih
Chen, Yi-Huan
Kalnitsky, Alexander
description The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a low voltage region and a high voltage region are integrated in a substrate. A low voltage transistor device is disposed in the low voltage region and comprises a low voltage gate electrode and a low voltage gate dielectric separating the low voltage gate electrode from the substrate. A first interlayer dielectric layer is disposed over the substrate surrounding the low voltage gate electrode and the low voltage gate dielectric. A high voltage transistor device is disposed in the high voltage region and comprises a high voltage gate electrode disposed on the first interlayer dielectric layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY
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