MINIMIZE MIDDLE-OF-LINE CONTACT LINE SHORTS

Semiconductor structures and methods of forming such structures are disclosed. In an embodiment, the semiconductor structure comprises a substrate, a dielectric layer, and a plurality of gates, including a first gate and a pair of adjacent gates. The method comprises forming gate caps on the adjacen...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Pranatharthiharan, Balasubramanian, Seo, Soon-Cheon, Ok, Injo, Surisetty, Charan V
Format: Patent
Sprache:eng
Schlagworte:
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