MASK INSPECTION APPARATUS, ELECTRON BEAM INSPECTION APPARATUS, MASK INSPECTION METHOD, AND ELECTRON BEAM INSPECTION METHOD
A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident directio...
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| creator | YOSHITAKE, Shusuke |
| description | A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus. |
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pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CALCULATING ; CINEMATOGRAPHY ; COMPUTING ; COUNTING ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; IMAGE DATA PROCESSING OR GENERATION, IN GENERAL ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF 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mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>CINEMATOGRAPHY</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>IMAGE DATA PROCESSING OR GENERATION, IN GENERAL</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZKjydQz2VvD0Cw5wdQ7x9PdTcAwIcAxyDAkN1lFw9QGKBQHFnFwdfXGoQdfu6xri4e-io-Do54JbP0QRDwNrWmJOcSovlOZmUHZzDXH20E0tyI9PLS5ITE7NSy2JDw02MjAyMLY0MTe3cDQ0Jk4VAAE1O44</recordid><startdate>20201217</startdate><enddate>20201217</enddate><creator>YOSHITAKE, Shusuke</creator><scope>EVB</scope></search><sort><creationdate>20201217</creationdate><title>MASK INSPECTION APPARATUS, ELECTRON BEAM INSPECTION APPARATUS, MASK 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the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY IMAGE DATA PROCESSING OR GENERATION, IN GENERAL MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | MASK INSPECTION APPARATUS, ELECTRON BEAM INSPECTION APPARATUS, MASK INSPECTION METHOD, AND ELECTRON BEAM INSPECTION METHOD |
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