SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LEE, Kwang-Wook, YANG, Young-Ho, SHIM, Jung-Myoung, CHOI, Won-Joon, EOM, Hyeng-Woo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.