WAFER PRODUCTION METHOD

A manufacturing method of a wafer includes a first and a second resin-application grinding step, and a third surface-grinding step. The first step includes: a first formation step of forming a first coating layer; a first surface-grinding step of placing the wafer so that the first coating layer con...

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Bibliographische Detailangaben
Hauptverfasser:	HASHIMOTO, Yasuyuki, TANAKA, Toshiyuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A manufacturing method of a wafer includes a first and a second resin-application grinding step, and a third surface-grinding step. The first step includes: a first formation step of forming a first coating layer; a first surface-grinding step of placing the wafer so that the first coating layer contacts a reference surface of a table and surface-grinding a first surface of the wafer; and a first removal step of removing the first coating layer. The second step includes: a second formation step of forming a second coating layer; a second surface-grinding step of placing the wafer so that the second coating layer contacts the reference surface and surface-grinding the second surface; and a second removal step of removing the second coating layer. In the third step, the wafer is placed so that the last surface-ground surface contacts the reference surface and a surface opposite the contacted surface is surface-ground.