CONTROL OF P-CONTACT RESISTANCE IN A SEMICONDUCTOR LIGHT EMITTING DEVICE

A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	CHOY, Kwong-Hin Henry
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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