INTEGRATED CHANNEL DIODE

A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transisto...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Molloy, Simon John, Kocon, Christopher Boguslaw, Neilson, John Manning Savidge, Kawahara, Hideaki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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