STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CAPACITORS

The present disclosure relates to a semiconductor device structure. The semiconductor device structure has a first conductive layer disposed over a substrate and a first capacitor dielectric layer comprising a first dielectric material disposed over the first conductive layer. A second conductive la...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chung, Chiu-Hua, Chang, Chen-Chien, Luo, Guo-Jyun, Pan, Han-Zong, Lin, Shiuan-Jeng
Format: Patent
Sprache:eng
Schlagworte:
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