SET/RESET METHODS FOR CRYSTALLIZATION IMPROVEMENT IN PHASE CHANGE MEMORIES

Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nucle...

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Bibliographische Detailangaben

Hauptverfasser:	Apodaca, Mac D, Bertero, Gerardo A, Bai, Zhaoqiang, Tran, Michael Nicolas Albert, Grobis, Michael K, Robertson, Neil Leslie
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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