THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DIRECT SOURCE CONTACT STRUCTURE AND METHODS FOR MAKING THE SAME

A source-level sacrificial layer and an alternating stack of insulating layers and sacrificial material layers are formed over a substrate. Memory openings are formed through the alternating stack, and a source cavity is formed by removing the source-level sacrificial layer. A memory film is formall...

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Bibliographische Detailangaben

Hauptverfasser:	OTSU, Yoshitaka, SHIMIZU, Satoshi, KOTO, Makoto
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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