METHODS FOR FORMING DEVICE ISOLATION FOR SEMICONDUCTOR APPLICATIONS

The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes forming a multi-material l...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DUKOVIC, John O, KIM, Nam Sung, SUN, Shiyu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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