SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to −30° C. or less; and etching the first film through...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NORO, Motoki, KINO, Shu, HAMA, Yasutaka
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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