METHODS AND APPARATUS FOR REMOVING ABRASIVE PARTICLES

Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized flu...

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Hauptverfasser:	PENG, QI JIE, ONG, PANGYEN, OSTERMAN, SCOTT, GAN, PIN GIAN, LOO, ANDY, TO, CHUN YU, SEE, GUAN HUEI, SUO, PENG, TEO, KOK SEONG, LAM, LIT PING, YPMA, KEITH, HUNG, SHIHAO, NORHAZWAN, MUHAMMAD, AZIM, MUHAMMAD, LIANTO, PRAYUDI, SURDOCK, DAVID P, WILLIAMS, BRIAN, BERNT, MARVIN L, GOPINATH, SAMUEL, SUNDARRAJAN, ARVIND, THIRUNAVUKARASU, SRISKANTHARAJAH, GOPALAN, PERIYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized fluid in a divergent spray pattern such that the substrate surface is cleansed when impinged by spray from the at least one spray nozzle, wherein the at least one spray nozzle sprays the atomized fluid at a pressure of approximately 30 psi to approximately 2500 psi.