SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION

A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, Ju-Youn, Ha, Tae-Won, Youn, Jong-Mil, Jang, Hyung-Soon
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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