SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION

A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Kim, Ju-Youn, Ha, Tae-Won, Youn, Jong-Mil, Jang, Hyung-Soon
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	Kim, Ju-Youn Ha, Tae-Won Youn, Jong-Mil Jang, Hyung-Soon
description	A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020303547A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020303547A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020303547A13</originalsourceid><addsrcrecordid>eNrjZAgPdvX1dPb3cwl1DvEPUnBxDfN0dlXw9HP2CXXx9HNXcFRw8wwKDgGSfgqOziGeYa4KQa7unv5Anp8LUDbYFaQZU5qHgTUtMac4lRdKczMou7mGOHvophbkx6cWFyQmp-allsSHBhsZGBkYGxibmpg7GhoTpwoAQTUxRQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION</title><source>esp@cenet</source><creator>Kim, Ju-Youn ; Ha, Tae-Won ; Youn, Jong-Mil ; Jang, Hyung-Soon</creator><creatorcontrib>Kim, Ju-Youn ; Ha, Tae-Won ; Youn, Jong-Mil ; Jang, Hyung-Soon</creatorcontrib><description>A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200924&DB=EPODOC&CC=US&NR=2020303547A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200924&DB=EPODOC&CC=US&NR=2020303547A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Ju-Youn</creatorcontrib><creatorcontrib>Ha, Tae-Won</creatorcontrib><creatorcontrib>Youn, Jong-Mil</creatorcontrib><creatorcontrib>Jang, Hyung-Soon</creatorcontrib><title>SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION</title><description>A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgPdvX1dPb3cwl1DvEPUnBxDfN0dlXw9HP2CXXx9HNXcFRw8wwKDgGSfgqOziGeYa4KQa7unv5Anp8LUDbYFaQZU5qHgTUtMac4lRdKczMou7mGOHvophbkx6cWFyQmp-allsSHBhsZGBkYGxibmpg7GhoTpwoAQTUxRQ</recordid><startdate>20200924</startdate><enddate>20200924</enddate><creator>Kim, Ju-Youn</creator><creator>Ha, Tae-Won</creator><creator>Youn, Jong-Mil</creator><creator>Jang, Hyung-Soon</creator><scope>EVB</scope></search><sort><creationdate>20200924</creationdate><title>SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION</title><author>Kim, Ju-Youn ; Ha, Tae-Won ; Youn, Jong-Mil ; Jang, Hyung-Soon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020303547A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Ju-Youn</creatorcontrib><creatorcontrib>Ha, Tae-Won</creatorcontrib><creatorcontrib>Youn, Jong-Mil</creatorcontrib><creatorcontrib>Jang, Hyung-Soon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Ju-Youn</au><au>Ha, Tae-Won</au><au>Youn, Jong-Mil</au><au>Jang, Hyung-Soon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION</title><date>2020-09-24</date><risdate>2020</risdate><abstract>A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US2020303547A1
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T01%3A52%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Ju-Youn&rft.date=2020-09-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020303547A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true