METHOD FOR THE PRODUCTION OF A SEMI-TRANSPARENT DISPLAY, AND A SEMI-TRANSPARENT DISPLAY
Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At le...
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| creator | Wartenberg, Philipp Richter, Bernd Vogel, Uwe Brenner, Stephan Kirchhoff, Volker |
| description | Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020303486A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020303486A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020303486A13</originalsourceid><addsrcrecordid>eNrjZAj3dQ3x8HdRcPMPUgjxcFUICPJ3CXUO8fT3U_B3U3BUCHb19dQNCXL0Cw5wDHL1C1Fw8QwO8HGM1FFw9HPBI8_DwJqWmFOcyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-JDg40MjAyMDYxNLMwcDY2JUwUAZ58xtg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR THE PRODUCTION OF A SEMI-TRANSPARENT DISPLAY, AND A SEMI-TRANSPARENT DISPLAY</title><source>esp@cenet</source><creator>Wartenberg, Philipp ; Richter, Bernd ; Vogel, Uwe ; Brenner, Stephan ; Kirchhoff, Volker</creator><creatorcontrib>Wartenberg, Philipp ; Richter, Bernd ; Vogel, Uwe ; Brenner, Stephan ; Kirchhoff, Volker</creatorcontrib><description>Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200924&DB=EPODOC&CC=US&NR=2020303486A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200924&DB=EPODOC&CC=US&NR=2020303486A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wartenberg, Philipp</creatorcontrib><creatorcontrib>Richter, Bernd</creatorcontrib><creatorcontrib>Vogel, Uwe</creatorcontrib><creatorcontrib>Brenner, Stephan</creatorcontrib><creatorcontrib>Kirchhoff, Volker</creatorcontrib><title>METHOD FOR THE PRODUCTION OF A SEMI-TRANSPARENT DISPLAY, AND A SEMI-TRANSPARENT DISPLAY</title><description>Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj3dQ3x8HdRcPMPUgjxcFUICPJ3CXUO8fT3U_B3U3BUCHb19dQNCXL0Cw5wDHL1C1Fw8QwO8HGM1FFw9HPBI8_DwJqWmFOcyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-JDg40MjAyMDYxNLMwcDY2JUwUAZ58xtg</recordid><startdate>20200924</startdate><enddate>20200924</enddate><creator>Wartenberg, Philipp</creator><creator>Richter, Bernd</creator><creator>Vogel, Uwe</creator><creator>Brenner, Stephan</creator><creator>Kirchhoff, Volker</creator><scope>EVB</scope></search><sort><creationdate>20200924</creationdate><title>METHOD FOR THE PRODUCTION OF A SEMI-TRANSPARENT DISPLAY, AND A SEMI-TRANSPARENT DISPLAY</title><author>Wartenberg, Philipp ; Richter, Bernd ; Vogel, Uwe ; Brenner, Stephan ; Kirchhoff, Volker</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020303486A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wartenberg, Philipp</creatorcontrib><creatorcontrib>Richter, Bernd</creatorcontrib><creatorcontrib>Vogel, Uwe</creatorcontrib><creatorcontrib>Brenner, Stephan</creatorcontrib><creatorcontrib>Kirchhoff, Volker</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wartenberg, Philipp</au><au>Richter, Bernd</au><au>Vogel, Uwe</au><au>Brenner, Stephan</au><au>Kirchhoff, Volker</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR THE PRODUCTION OF A SEMI-TRANSPARENT DISPLAY, AND A SEMI-TRANSPARENT DISPLAY</title><date>2020-09-24</date><risdate>2020</risdate><abstract>Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR THE PRODUCTION OF A SEMI-TRANSPARENT DISPLAY, AND A SEMI-TRANSPARENT DISPLAY |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T04%3A53%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Wartenberg,%20Philipp&rft.date=2020-09-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020303486A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |