DIFFERENTIAL TRENCH FILL FOR EASE OF LAYOUT DESIGN
An integrated circuit structure comprises a plurality of structures above a substrate, wherein spacing between the structures creates a range of different open density regions from a relatively low open density region to a high open density region. A first fill material fills at least a portion of o...
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| creator | LEE, Chen-Guan |
| description | An integrated circuit structure comprises a plurality of structures above a substrate, wherein spacing between the structures creates a range of different open density regions from a relatively low open density region to a high open density region. A first fill material fills at least a portion of openings between the structures in at least the high open density region to provide a substantially uniform open density across the different open density regions, wherein the first fill material is patterned to include openings therein. A second fill material fills the openings between the structures in the low open density region, and fills the openings in the first fill material in the at least the high open density region. |
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A first fill material fills at least a portion of openings between the structures in at least the high open density region to provide a substantially uniform open density across the different open density regions, wherein the first fill material is patterned to include openings therein. A second fill material fills the openings between the structures in the low open density region, and fills the openings in the first fill material in the at least the high open density region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200917&DB=EPODOC&CC=US&NR=2020294986A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200917&DB=EPODOC&CC=US&NR=2020294986A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, Chen-Guan</creatorcontrib><title>DIFFERENTIAL TRENCH FILL FOR EASE OF LAYOUT DESIGN</title><description>An integrated circuit structure comprises a plurality of structures above a substrate, wherein spacing between the structures creates a range of different open density regions from a relatively low open density region to a high open density region. A first fill material fills at least a portion of openings between the structures in at least the high open density region to provide a substantially uniform open density across the different open density regions, wherein the first fill material is patterned to include openings therein. A second fill material fills the openings between the structures in the low open density region, and fills the openings in the first fill material in the at least the high open density region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBy8XRzcw1y9QvxdPRRCAEynD0U3Dx9fBTc_IMUXB2DXRX83RR8HCP9Q0MUXFyDPd39eBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkQEQWppYWpg5GhoTpwoA9Q8niw</recordid><startdate>20200917</startdate><enddate>20200917</enddate><creator>LEE, Chen-Guan</creator><scope>EVB</scope></search><sort><creationdate>20200917</creationdate><title>DIFFERENTIAL TRENCH FILL FOR EASE OF LAYOUT DESIGN</title><author>LEE, Chen-Guan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020294986A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, Chen-Guan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Chen-Guan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DIFFERENTIAL TRENCH FILL FOR EASE OF LAYOUT DESIGN</title><date>2020-09-17</date><risdate>2020</risdate><abstract>An integrated circuit structure comprises a plurality of structures above a substrate, wherein spacing between the structures creates a range of different open density regions from a relatively low open density region to a high open density region. A first fill material fills at least a portion of openings between the structures in at least the high open density region to provide a substantially uniform open density across the different open density regions, wherein the first fill material is patterned to include openings therein. A second fill material fills the openings between the structures in the low open density region, and fills the openings in the first fill material in the at least the high open density region.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | DIFFERENTIAL TRENCH FILL FOR EASE OF LAYOUT DESIGN |
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