MEMORY DIE CONTAINING THROUGH-MEMORY-LEVEL VIA STRUCTURE AND METHODS FOR MAKING THE SAME

An alternating stack of insulating layers and spacer material layers is formed over a substrate. At least one dielectric material portion is formed over the substrate adjacent to the alternating stack. Memory stack structures are formed through the alternating stack. A trench extending through the a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shimizu, Satoshi, Moriyama, Takumi, Sasaki, Hiroshi, Masamori, Yohei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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