Memory Cells Comprising Ferroelectric Material And Including Current Leakage Paths Having Different Total Resistances

A memory cell comprises a capacitor having a first conductive capacitor electrode having laterally-spaced walls that individually have a top surface. A second conductive capacitor electrode is laterally between the walls of the first capacitor electrode, and comprises a portion above the first capac...

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Bibliographische Detailangaben

Hauptverfasser:	Balakrishnan, Muralikrishnan, Cook, Beth R, Ramaswamy, Durai Vishak Nirmal
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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