METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE
An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TADA, Masahiro OKAYAMA, Yoshio KOMATSU, Shinsuke YOSHIMURA, Masashi IMANISHI, Masayuki MORI, Yusuke |
| description | An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020263320A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020263320A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020263320A13</originalsourceid><addsrcrecordid>eNrjZHD0dQ3x8HdRcPMPUggI8ncJdfb0c1dwD_IPDVDw9PRU8PMMCfJ0cVVwDooMDnH0UXD0c1EIdnUFEqFOwSFBjiGuPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyAAIzYyNjQwcDY2JUwUAfP4rwQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE</title><source>esp@cenet</source><creator>TADA, Masahiro ; OKAYAMA, Yoshio ; KOMATSU, Shinsuke ; YOSHIMURA, Masashi ; IMANISHI, Masayuki ; MORI, Yusuke</creator><creatorcontrib>TADA, Masahiro ; OKAYAMA, Yoshio ; KOMATSU, Shinsuke ; YOSHIMURA, Masashi ; IMANISHI, Masayuki ; MORI, Yusuke</creatorcontrib><description>An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200820&DB=EPODOC&CC=US&NR=2020263320A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200820&DB=EPODOC&CC=US&NR=2020263320A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TADA, Masahiro</creatorcontrib><creatorcontrib>OKAYAMA, Yoshio</creatorcontrib><creatorcontrib>KOMATSU, Shinsuke</creatorcontrib><creatorcontrib>YOSHIMURA, Masashi</creatorcontrib><creatorcontrib>IMANISHI, Masayuki</creatorcontrib><creatorcontrib>MORI, Yusuke</creatorcontrib><title>METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE</title><description>An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD0dQ3x8HdRcPMPUggI8ncJdfb0c1dwD_IPDVDw9PRU8PMMCfJ0cVVwDooMDnH0UXD0c1EIdnUFEqFOwSFBjiGuPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyAAIzYyNjQwcDY2JUwUAfP4rwQ</recordid><startdate>20200820</startdate><enddate>20200820</enddate><creator>TADA, Masahiro</creator><creator>OKAYAMA, Yoshio</creator><creator>KOMATSU, Shinsuke</creator><creator>YOSHIMURA, Masashi</creator><creator>IMANISHI, Masayuki</creator><creator>MORI, Yusuke</creator><scope>EVB</scope></search><sort><creationdate>20200820</creationdate><title>METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE</title><author>TADA, Masahiro ; OKAYAMA, Yoshio ; KOMATSU, Shinsuke ; YOSHIMURA, Masashi ; IMANISHI, Masayuki ; MORI, Yusuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020263320A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TADA, Masahiro</creatorcontrib><creatorcontrib>OKAYAMA, Yoshio</creatorcontrib><creatorcontrib>KOMATSU, Shinsuke</creatorcontrib><creatorcontrib>YOSHIMURA, Masashi</creatorcontrib><creatorcontrib>IMANISHI, Masayuki</creatorcontrib><creatorcontrib>MORI, Yusuke</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TADA, Masahiro</au><au>OKAYAMA, Yoshio</au><au>KOMATSU, Shinsuke</au><au>YOSHIMURA, Masashi</au><au>IMANISHI, Masayuki</au><au>MORI, Yusuke</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE</title><date>2020-08-20</date><risdate>2020</risdate><abstract>An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2020263320A1 |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T12%3A20%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TADA,%20Masahiro&rft.date=2020-08-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020263320A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |