FABRICATION OF LOGIC DEVICES AND POWER DEVICES ON THE SAME SUBSTRATE

FABRICATION OF LOGIC DEVICES AND POWER DEVICES ON THE SAME SUBSTRATE

A method of forming a logic device and a power device on a substrate is provided. The method includes forming a first vertical fin on a first region of the substrate and a second vertical fin on a second region of the substrate, wherein an isolation region separates the first region from the second...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Li, Juntao, Jiang, Liying, Cheng, Kangguo, Gaudiello, John G
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a logic device and a power device on a substrate is provided. The method includes forming a first vertical fin on a first region of the substrate and a second vertical fin on a second region of the substrate, wherein an isolation region separates the first region from the second region, forming a dielectric under-layer segment on the second vertical fin on the second region, and forming a first gate structure on the dielectric under-layer segment and second vertical fin on the second region.