POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR POWER SEMICONDUCTOR DEVICE

A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat ge...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MURAMATSU, Yuya, HARUNA, Hiroaki, SUGI, Yutaro, BESSHI, Noriyuki, YABUTA, Kohei, YAMADA, Takayuki, FUKU, Masaru, FUJITA, Atsuki
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!