NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating the three dimensional (3D), non-volatile memory (NVM) device includes: forming a stacked structure including a plurality of interlayer insulating layers and a plurality of first material layers which are alternately stacked; forming at least one channel hole penetrating thro...
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| creator | OH, Jin-Ho GWON, Tae-Hong KWON, Il-Young BIN, Jin-Ho LEE, Su-Hyun |
| description | A method for fabricating the three dimensional (3D), non-volatile memory (NVM) device includes: forming a stacked structure including a plurality of interlayer insulating layers and a plurality of first material layers which are alternately stacked; forming at least one channel hole penetrating through the stack structure; forming a second material layer along the at least one channel hole; trimming a surface of the second material layer; oxidizing a whole of the trimmed second material layer to form at least a portion of a charge blocking layer; and forming a charge storage layer and a tunnel insulating layer over the charge blocking layer. |
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| title | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME |
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