ISOLATION STRUCTURES OF FINFET SEMICONDUCTOR DEVICES

A method of fabricating a semiconductor device is provided, which includes providing sacrificial gate structures over a plurality of fins, wherein the sacrificial gate structures include a first sacrificial gate structure and a second sacrificial gate structure. A fin cut process is performed to for...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DECHENE, JESSICA MARY, ZANG, HUI, XIE, RUILONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!