PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION

PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION

Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bailey, III, Andrew D, Marakhtanov, Alexei, Hudson, Eric, Dhindsa, Rajinder
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Bailey, III, Andrew D
Marakhtanov, Alexei
Hudson, Eric
Dhindsa, Rajinder
description Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020227237A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020227237A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020227237A13</originalsourceid><addsrcrecordid>eNrjZDAOCPUJdnVRCPBxDPZ1VHD2cPR1cg1S8PRTcAl19IHznf393DzdQ4McQzz9_XgYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJEBEBqZGxmbOxoaE6cKAB5LJ8g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION</title><source>esp@cenet</source><creator>Bailey, III, Andrew D ; Marakhtanov, Alexei ; Hudson, Eric ; Dhindsa, Rajinder</creator><creatorcontrib>Bailey, III, Andrew D ; Marakhtanov, Alexei ; Hudson, Eric ; Dhindsa, Rajinder</creatorcontrib><description>Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200716&amp;DB=EPODOC&amp;CC=US&amp;NR=2020227237A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200716&amp;DB=EPODOC&amp;CC=US&amp;NR=2020227237A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bailey, III, Andrew D</creatorcontrib><creatorcontrib>Marakhtanov, Alexei</creatorcontrib><creatorcontrib>Hudson, Eric</creatorcontrib><creatorcontrib>Dhindsa, Rajinder</creatorcontrib><title>PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION</title><description>Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAOCPUJdnVRCPBxDPZ1VHD2cPR1cg1S8PRTcAl19IHznf393DzdQ4McQzz9_XgYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJEBEBqZGxmbOxoaE6cKAB5LJ8g</recordid><startdate>20200716</startdate><enddate>20200716</enddate><creator>Bailey, III, Andrew D</creator><creator>Marakhtanov, Alexei</creator><creator>Hudson, Eric</creator><creator>Dhindsa, Rajinder</creator><scope>EVB</scope></search><sort><creationdate>20200716</creationdate><title>PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION</title><author>Bailey, III, Andrew D ; Marakhtanov, Alexei ; Hudson, Eric ; Dhindsa, Rajinder</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020227237A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Bailey, III, Andrew D</creatorcontrib><creatorcontrib>Marakhtanov, Alexei</creatorcontrib><creatorcontrib>Hudson, Eric</creatorcontrib><creatorcontrib>Dhindsa, Rajinder</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bailey, III, Andrew D</au><au>Marakhtanov, Alexei</au><au>Hudson, Eric</au><au>Dhindsa, Rajinder</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION</title><date>2020-07-16</date><risdate>2020</risdate><abstract>Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2020227237A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T20%3A04%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Bailey,%20III,%20Andrew%20D&rft.date=2020-07-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020227237A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true