SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-...

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Bibliographische Detailangaben
Hauptverfasser: FUNAKI, Katsunori, MUROBAYASHI, Masaki, YASUI, Takeshi, HARADA, Koichiro
Format: Patent
Sprache:eng
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