HETEROEPITAXIAL WAFER AND METHOD FOR PRODUCING A HETEROEPITAXIAL WAFER
A heteroepitaxial wafer and a method for producing a heteroepitaxial wafer. The heteroepitaxial wafer comprises in the following order: a silicon substrate having a diameter and a thickness; an AIN nucleation layer; a first strain building layer which is an Al z Ga 1-z N layer having a first average...
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| creator | THAPA, Sarad Bahadur VORDERWESTNER, Martin |
| description | A heteroepitaxial wafer and a method for producing a heteroepitaxial wafer. The heteroepitaxial wafer comprises in the following order:
a silicon substrate having a diameter and a thickness;
an AIN nucleation layer;
a first strain building layer which is an Al z Ga 1-z N layer having a first average Al content z, wherein 0 < z;
a first strain preserving block comprising not less than 5 and not more than 50 units of a first sequence of layers, the first sequence of layers comprising an AIN layer and at least two AlGaN layers, the first strain preserving block having a second average Al content y, wherein y > z;
a second strain building layer which is an Al x Ga 1-x N layer having a third average Al content x, wherein 0 ¤ x < y;
a second strain preserving block comprising not less than 5 and not more than 50 units of a second sequence of layers, the second sequence of layers comprising an AIN layer and at least one AlGaN layer, the second strain preserving block having a fourth average Al content w, wherein x < w < y, and
a GaN layer, wherein the layers between the AIN nucleation layer and the GaN layer form an AlGaN buffer. |
| format | Patent |
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a silicon substrate having a diameter and a thickness;
an AIN nucleation layer;
a first strain building layer which is an Al z Ga 1-z N layer having a first average Al content z, wherein 0 < z;
a first strain preserving block comprising not less than 5 and not more than 50 units of a first sequence of layers, the first sequence of layers comprising an AIN layer and at least two AlGaN layers, the first strain preserving block having a second average Al content y, wherein y > z;
a second strain building layer which is an Al x Ga 1-x N layer having a third average Al content x, wherein 0 ¤ x < y;
a second strain preserving block comprising not less than 5 and not more than 50 units of a second sequence of layers, the second sequence of layers comprising an AIN layer and at least one AlGaN layer, the second strain preserving block having a fourth average Al content w, wherein x < w < y, and
a GaN layer, wherein the layers between the AIN nucleation layer and the GaN layer form an AlGaN buffer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&CC=US&NR=2020203485A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&CC=US&NR=2020203485A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>THAPA, Sarad Bahadur</creatorcontrib><creatorcontrib>VORDERWESTNER, Martin</creatorcontrib><title>HETEROEPITAXIAL WAFER AND METHOD FOR PRODUCING A HETEROEPITAXIAL WAFER</title><description>A heteroepitaxial wafer and a method for producing a heteroepitaxial wafer. The heteroepitaxial wafer comprises in the following order:
a silicon substrate having a diameter and a thickness;
an AIN nucleation layer;
a first strain building layer which is an Al z Ga 1-z N layer having a first average Al content z, wherein 0 < z;
a first strain preserving block comprising not less than 5 and not more than 50 units of a first sequence of layers, the first sequence of layers comprising an AIN layer and at least two AlGaN layers, the first strain preserving block having a second average Al content y, wherein y > z;
a second strain building layer which is an Al x Ga 1-x N layer having a third average Al content x, wherein 0 ¤ x < y;
a second strain preserving block comprising not less than 5 and not more than 50 units of a second sequence of layers, the second sequence of layers comprising an AIN layer and at least one AlGaN layer, the second strain preserving block having a fourth average Al content w, wherein x < w < y, and
a GaN layer, wherein the layers between the AIN nucleation layer and the GaN layer form an AlGaN buffer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDzcA1xDfJ3DfAMcYzwdPRRCHd0cw1ScPRzUfB1DfHwd1Fw8w9SCAjydwl19vRzV3BUwKqBh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEhwYbGYCgsYmFqaOhMXGqAGMXLTY</recordid><startdate>20200625</startdate><enddate>20200625</enddate><creator>THAPA, Sarad Bahadur</creator><creator>VORDERWESTNER, Martin</creator><scope>EVB</scope></search><sort><creationdate>20200625</creationdate><title>HETEROEPITAXIAL WAFER AND METHOD FOR PRODUCING A HETEROEPITAXIAL WAFER</title><author>THAPA, Sarad Bahadur ; VORDERWESTNER, Martin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020203485A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>THAPA, Sarad Bahadur</creatorcontrib><creatorcontrib>VORDERWESTNER, Martin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>THAPA, Sarad Bahadur</au><au>VORDERWESTNER, Martin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HETEROEPITAXIAL WAFER AND METHOD FOR PRODUCING A HETEROEPITAXIAL WAFER</title><date>2020-06-25</date><risdate>2020</risdate><abstract>A heteroepitaxial wafer and a method for producing a heteroepitaxial wafer. The heteroepitaxial wafer comprises in the following order:
a silicon substrate having a diameter and a thickness;
an AIN nucleation layer;
a first strain building layer which is an Al z Ga 1-z N layer having a first average Al content z, wherein 0 < z;
a first strain preserving block comprising not less than 5 and not more than 50 units of a first sequence of layers, the first sequence of layers comprising an AIN layer and at least two AlGaN layers, the first strain preserving block having a second average Al content y, wherein y > z;
a second strain building layer which is an Al x Ga 1-x N layer having a third average Al content x, wherein 0 ¤ x < y;
a second strain preserving block comprising not less than 5 and not more than 50 units of a second sequence of layers, the second sequence of layers comprising an AIN layer and at least one AlGaN layer, the second strain preserving block having a fourth average Al content w, wherein x < w < y, and
a GaN layer, wherein the layers between the AIN nucleation layer and the GaN layer form an AlGaN buffer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | HETEROEPITAXIAL WAFER AND METHOD FOR PRODUCING A HETEROEPITAXIAL WAFER |
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