SOURCE/DRAIN CONTACT DEPTH CONTROL

SOURCE/DRAIN CONTACT DEPTH CONTROL

A dielectric fill layer within source/drain metallization trenches limits the depth of an inlaid metallization layer over isolation regions of a semiconductor device. The modified geometry decreases parasitic capacitance as well as the propensity for electrical short circuits between the source/drai...

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Hauptverfasser: GREENE, Brian J, HU, Lin, TABAKMAN, Keith, ZHAO, Kai, NASSAR, Christopher, BASKER, Veeraraghavan S, JAEGER, Daniel
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator GREENE, Brian J
HU, Lin
TABAKMAN, Keith
ZHAO, Kai
NASSAR, Christopher
BASKER, Veeraraghavan S
JAEGER, Daniel
description A dielectric fill layer within source/drain metallization trenches limits the depth of an inlaid metallization layer over isolation regions of a semiconductor device. The modified geometry decreases parasitic capacitance as well as the propensity for electrical short circuits between the source/drain metallization and adjacent conductive structures, which improves device reliability and performance.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SOURCE/DRAIN CONTACT DEPTH CONTROL
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