Field-to-Field Corrections Using Overlay Targets
A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second ex...
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creator | Tarshish-Shapir, Inna Shaphirov, Diana Leshinsky-Altshuller, Enna Ghinovker, Mark Ben Dov, Guy Volkovich, Roie Steely, Chris |
description | A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020201193A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020201193A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020201193A13</originalsourceid><addsrcrecordid>eNrjZDBwy0zNSdEtydcFMxSc84uKUpNLMvPzihVCizPz0hX8y1KLchIrFUISi9JTS4p5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRAQgaGloaOxoaE6cKANj0K8U</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Field-to-Field Corrections Using Overlay Targets</title><source>esp@cenet</source><creator>Tarshish-Shapir, Inna ; Shaphirov, Diana ; Leshinsky-Altshuller, Enna ; Ghinovker, Mark ; Ben Dov, Guy ; Volkovich, Roie ; Steely, Chris</creator><creatorcontrib>Tarshish-Shapir, Inna ; Shaphirov, Diana ; Leshinsky-Altshuller, Enna ; Ghinovker, Mark ; Ben Dov, Guy ; Volkovich, Roie ; Steely, Chris</creatorcontrib><description>A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&CC=US&NR=2020201193A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&CC=US&NR=2020201193A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tarshish-Shapir, Inna</creatorcontrib><creatorcontrib>Shaphirov, Diana</creatorcontrib><creatorcontrib>Leshinsky-Altshuller, Enna</creatorcontrib><creatorcontrib>Ghinovker, Mark</creatorcontrib><creatorcontrib>Ben Dov, Guy</creatorcontrib><creatorcontrib>Volkovich, Roie</creatorcontrib><creatorcontrib>Steely, Chris</creatorcontrib><title>Field-to-Field Corrections Using Overlay Targets</title><description>A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBwy0zNSdEtydcFMxSc84uKUpNLMvPzihVCizPz0hX8y1KLchIrFUISi9JTS4p5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRAQgaGloaOxoaE6cKANj0K8U</recordid><startdate>20200625</startdate><enddate>20200625</enddate><creator>Tarshish-Shapir, Inna</creator><creator>Shaphirov, Diana</creator><creator>Leshinsky-Altshuller, Enna</creator><creator>Ghinovker, Mark</creator><creator>Ben Dov, Guy</creator><creator>Volkovich, Roie</creator><creator>Steely, Chris</creator><scope>EVB</scope></search><sort><creationdate>20200625</creationdate><title>Field-to-Field Corrections Using Overlay Targets</title><author>Tarshish-Shapir, Inna ; Shaphirov, Diana ; Leshinsky-Altshuller, Enna ; Ghinovker, Mark ; Ben Dov, Guy ; Volkovich, Roie ; Steely, Chris</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020201193A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Tarshish-Shapir, Inna</creatorcontrib><creatorcontrib>Shaphirov, Diana</creatorcontrib><creatorcontrib>Leshinsky-Altshuller, Enna</creatorcontrib><creatorcontrib>Ghinovker, Mark</creatorcontrib><creatorcontrib>Ben Dov, Guy</creatorcontrib><creatorcontrib>Volkovich, Roie</creatorcontrib><creatorcontrib>Steely, Chris</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tarshish-Shapir, Inna</au><au>Shaphirov, Diana</au><au>Leshinsky-Altshuller, Enna</au><au>Ghinovker, Mark</au><au>Ben Dov, Guy</au><au>Volkovich, Roie</au><au>Steely, Chris</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Field-to-Field Corrections Using Overlay Targets</title><date>2020-06-25</date><risdate>2020</risdate><abstract>A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
title | Field-to-Field Corrections Using Overlay Targets |
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