NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE

Provided is a nitride semiconductor structure capable of preventing deterioration of transistor characteristics caused by diffusion of a P-type conductive element by using an extremely simple configuration, instead of introducing a diffusion suppression layer. A nitride semiconductor substrate compr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOMIYAMA, Jun, ERIGUCHI, Kenichi, ABE, Yoshihisa
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!