OXIDE SINTERED BODY AND SPUTTERING TARGET

An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered b...

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Bibliographische Detailangaben
Hauptverfasser:	TAO, Yuki, NISHIYAMA, Kohei
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]≥40 atomic %, [In]≤15 atomic %, [Sn]≤4 atomic % are satisfied.