TRANSISTOR GATE STRUCTURE WITH HYBRID STACKS OF DIELECTRIC MATERIAL

An integrated circuit includes a gate structure in contact with a portion of semiconductor material between a source region and a drain region. The gate structure includes gate dielectric and a gate electrode. The gate dielectric includes at least two hybrid stacks of dielectric material. Each hybri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rode, Johann C, Beach, Samuel J, Then, Han Wui, Ramaswamy, Rahul, Hafez, Walid, Nidhi, Nidhi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!