APPARATUS FOR PHYSICAL VAPOR DEPOSITION AND METHOD FOR FORMING A LAYER
An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CHEN, HSIN-LIANG WANG, WENIH LEE, YUNG-YAO YEH, YI-MING LIN, HUNG-TING LIAO, CHIA-HUNG CHEN, CHENGIEH |
| description | An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020161100A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020161100A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020161100A13</originalsourceid><addsrcrecordid>eNrjZHBzDAhwDHIMCQ1WcPMPUgjwiAz2dHb0UQhzDAByXVwD_IM9Qzz9_RQc_VwUfF1DPPxdwAqB2NfTz13BUcHHMdI1iIeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYGRiaGRoaGDgaGhOnCgBadS0B</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS FOR PHYSICAL VAPOR DEPOSITION AND METHOD FOR FORMING A LAYER</title><source>esp@cenet</source><creator>CHEN, HSIN-LIANG ; WANG, WENIH ; LEE, YUNG-YAO ; YEH, YI-MING ; LIN, HUNG-TING ; LIAO, CHIA-HUNG ; CHEN, CHENGIEH</creator><creatorcontrib>CHEN, HSIN-LIANG ; WANG, WENIH ; LEE, YUNG-YAO ; YEH, YI-MING ; LIN, HUNG-TING ; LIAO, CHIA-HUNG ; CHEN, CHENGIEH</creatorcontrib><description>An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200521&DB=EPODOC&CC=US&NR=2020161100A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200521&DB=EPODOC&CC=US&NR=2020161100A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN, HSIN-LIANG</creatorcontrib><creatorcontrib>WANG, WENIH</creatorcontrib><creatorcontrib>LEE, YUNG-YAO</creatorcontrib><creatorcontrib>YEH, YI-MING</creatorcontrib><creatorcontrib>LIN, HUNG-TING</creatorcontrib><creatorcontrib>LIAO, CHIA-HUNG</creatorcontrib><creatorcontrib>CHEN, CHENGIEH</creatorcontrib><title>APPARATUS FOR PHYSICAL VAPOR DEPOSITION AND METHOD FOR FORMING A LAYER</title><description>An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBzDAhwDHIMCQ1WcPMPUgjwiAz2dHb0UQhzDAByXVwD_IM9Qzz9_RQc_VwUfF1DPPxdwAqB2NfTz13BUcHHMdI1iIeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYGRiaGRoaGDgaGhOnCgBadS0B</recordid><startdate>20200521</startdate><enddate>20200521</enddate><creator>CHEN, HSIN-LIANG</creator><creator>WANG, WENIH</creator><creator>LEE, YUNG-YAO</creator><creator>YEH, YI-MING</creator><creator>LIN, HUNG-TING</creator><creator>LIAO, CHIA-HUNG</creator><creator>CHEN, CHENGIEH</creator><scope>EVB</scope></search><sort><creationdate>20200521</creationdate><title>APPARATUS FOR PHYSICAL VAPOR DEPOSITION AND METHOD FOR FORMING A LAYER</title><author>CHEN, HSIN-LIANG ; WANG, WENIH ; LEE, YUNG-YAO ; YEH, YI-MING ; LIN, HUNG-TING ; LIAO, CHIA-HUNG ; CHEN, CHENGIEH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020161100A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN, HSIN-LIANG</creatorcontrib><creatorcontrib>WANG, WENIH</creatorcontrib><creatorcontrib>LEE, YUNG-YAO</creatorcontrib><creatorcontrib>YEH, YI-MING</creatorcontrib><creatorcontrib>LIN, HUNG-TING</creatorcontrib><creatorcontrib>LIAO, CHIA-HUNG</creatorcontrib><creatorcontrib>CHEN, CHENGIEH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN, HSIN-LIANG</au><au>WANG, WENIH</au><au>LEE, YUNG-YAO</au><au>YEH, YI-MING</au><au>LIN, HUNG-TING</au><au>LIAO, CHIA-HUNG</au><au>CHEN, CHENGIEH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR PHYSICAL VAPOR DEPOSITION AND METHOD FOR FORMING A LAYER</title><date>2020-05-21</date><risdate>2020</risdate><abstract>An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2020161100A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | APPARATUS FOR PHYSICAL VAPOR DEPOSITION AND METHOD FOR FORMING A LAYER |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T01%3A08%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEN,%20HSIN-LIANG&rft.date=2020-05-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020161100A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |