CMOS INVERTER AND ARRAY SUBSTRATE
is a channel width-length ratio of the N-type metal-oxide TFT and the P-type low-temperature polysilicon TFT, respectively, μn and μP is a mobility of the N-type metal-oxide TFT and P-type low-temperature polysilicon TFT. The performance of the CMOS inverter could be improved and the manufacturing c...
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| creator | LU, Poyen CHEN, Changdong HSU, Yuanjun LIU, Chuan WU, Yuanchun YANG, Boru ZHOU, Xingyu IM, Jangsoon |
| description | is a channel width-length ratio of the N-type metal-oxide TFT and the P-type low-temperature polysilicon TFT, respectively, μn and μP is a mobility of the N-type metal-oxide TFT and P-type low-temperature polysilicon TFT. The performance of the CMOS inverter could be improved and the manufacturing complexity and cost of the CMOS could be reduced. |
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| title | CMOS INVERTER AND ARRAY SUBSTRATE |
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