POWER DEVICE

A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, Jae-ho, Kim, Jun-hyeok, Baek, Kang-hyun, Kwon, Ui-hui, YOO, Jae-hyun, Jeong, Da-won, Lee, Kyu-ok
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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