POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body reg...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HONG, Seong Jo, YANG, Ha Yong, SEO, Young Ho, KANG, Soo Chang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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