SEMICONDUCTOR DEVICE WITH DAMASCENE STRUCTURE
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a conductive feature over the semiconductor substrate. The semiconductor device structure also includes a dielectric layer over the conductive feature and the semiconductor substra...
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| creator | PENG, Tai-Yen |
| description | A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a conductive feature over the semiconductor substrate. The semiconductor device structure also includes a dielectric layer over the conductive feature and the semiconductor substrate. The semiconductor device structure further includes a conductive via surrounded by the dielectric layer and electrically connected to the conductive feature. The conductive via has a side surface extending from a topmost surface of the dielectric layer to a bottommost surface of the dielectric layer, and the side surface of the conductive via curves inward. An entirety of the side surface is in direct contact with the first dielectric layer. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020126909A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020126909A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020126909A13</originalsourceid><addsrcrecordid>eNrjZNANdvX1dPb3cwl1DvEPUnBxDfN0dlUI9wzxUHBx9HUMdnb1c1UIDgkCSocGufIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDIwNDIzNLA0tHQ2PiVAEAb0Amow</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE WITH DAMASCENE STRUCTURE</title><source>esp@cenet</source><creator>PENG, Tai-Yen</creator><creatorcontrib>PENG, Tai-Yen</creatorcontrib><description>A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a conductive feature over the semiconductor substrate. The semiconductor device structure also includes a dielectric layer over the conductive feature and the semiconductor substrate. The semiconductor device structure further includes a conductive via surrounded by the dielectric layer and electrically connected to the conductive feature. The conductive via has a side surface extending from a topmost surface of the dielectric layer to a bottommost surface of the dielectric layer, and the side surface of the conductive via curves inward. An entirety of the side surface is in direct contact with the first dielectric layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200423&DB=EPODOC&CC=US&NR=2020126909A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200423&DB=EPODOC&CC=US&NR=2020126909A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PENG, Tai-Yen</creatorcontrib><title>SEMICONDUCTOR DEVICE WITH DAMASCENE STRUCTURE</title><description>A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a conductive feature over the semiconductor substrate. The semiconductor device structure also includes a dielectric layer over the conductive feature and the semiconductor substrate. The semiconductor device structure further includes a conductive via surrounded by the dielectric layer and electrically connected to the conductive feature. The conductive via has a side surface extending from a topmost surface of the dielectric layer to a bottommost surface of the dielectric layer, and the side surface of the conductive via curves inward. An entirety of the side surface is in direct contact with the first dielectric layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNANdvX1dPb3cwl1DvEPUnBxDfN0dlUI9wzxUHBx9HUMdnb1c1UIDgkCSocGufIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDIwNDIzNLA0tHQ2PiVAEAb0Amow</recordid><startdate>20200423</startdate><enddate>20200423</enddate><creator>PENG, Tai-Yen</creator><scope>EVB</scope></search><sort><creationdate>20200423</creationdate><title>SEMICONDUCTOR DEVICE WITH DAMASCENE STRUCTURE</title><author>PENG, Tai-Yen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020126909A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PENG, Tai-Yen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PENG, Tai-Yen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE WITH DAMASCENE STRUCTURE</title><date>2020-04-23</date><risdate>2020</risdate><abstract>A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a conductive feature over the semiconductor substrate. The semiconductor device structure also includes a dielectric layer over the conductive feature and the semiconductor substrate. The semiconductor device structure further includes a conductive via surrounded by the dielectric layer and electrically connected to the conductive feature. The conductive via has a side surface extending from a topmost surface of the dielectric layer to a bottommost surface of the dielectric layer, and the side surface of the conductive via curves inward. An entirety of the side surface is in direct contact with the first dielectric layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE WITH DAMASCENE STRUCTURE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T11%3A15%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PENG,%20Tai-Yen&rft.date=2020-04-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020126909A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |