Methods of Forming Metal Layer Structures in Semiconductor Devices

A method includes providing a substrate comprising a material layer and a hard mask layer; patterning the hard mask layer to form hard mask lines; forming a spacer layer over the substrate, including over the hard mask lines, resulting in trenches defined by the spacer layer, wherein the trenches tr...

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Bibliographische Detailangaben
Hauptverfasser: Lin, Yi-Hsiung, Chen, Hsin-Ping, Hsiao, Ethan, Lai, Chien Wen, Lai, Chih-Ming, Liu, Ru-Gun, Chuang, Cheng-Chi
Format: Patent
Sprache:eng
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