MULTIPLE PATTERNING WITH LATE LITHOGRAPHICALLY-DEFINED MANDREL CUTS

Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A porti...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chen, Hsueh-Chung, O'Toole, Martin, O'Brien, Brendan, Donegan, Keith
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Chen, Hsueh-Chung
O'Toole, Martin
O'Brien, Brendan
Donegan, Keith
description Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020111676A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020111676A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020111676A13</originalsourceid><addsrcrecordid>eNrjZHD2DfUJ8QzwcVUIcAwJcQ3y8_RzVwj3DPFQ8HEMcVXwAbL83YMcAzw8nR19fCJ1XVzdPP1cXRR8Hf1cglx9FJxDQ4J5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGBoaGhmbmZo6ExcaoABAksqg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MULTIPLE PATTERNING WITH LATE LITHOGRAPHICALLY-DEFINED MANDREL CUTS</title><source>esp@cenet</source><creator>Chen, Hsueh-Chung ; O'Toole, Martin ; O'Brien, Brendan ; Donegan, Keith</creator><creatorcontrib>Chen, Hsueh-Chung ; O'Toole, Martin ; O'Brien, Brendan ; Donegan, Keith</creatorcontrib><description>Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200409&amp;DB=EPODOC&amp;CC=US&amp;NR=2020111676A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200409&amp;DB=EPODOC&amp;CC=US&amp;NR=2020111676A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chen, Hsueh-Chung</creatorcontrib><creatorcontrib>O'Toole, Martin</creatorcontrib><creatorcontrib>O'Brien, Brendan</creatorcontrib><creatorcontrib>Donegan, Keith</creatorcontrib><title>MULTIPLE PATTERNING WITH LATE LITHOGRAPHICALLY-DEFINED MANDREL CUTS</title><description>Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD2DfUJ8QzwcVUIcAwJcQ3y8_RzVwj3DPFQ8HEMcVXwAbL83YMcAzw8nR19fCJ1XVzdPP1cXRR8Hf1cglx9FJxDQ4J5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGBoaGhmbmZo6ExcaoABAksqg</recordid><startdate>20200409</startdate><enddate>20200409</enddate><creator>Chen, Hsueh-Chung</creator><creator>O'Toole, Martin</creator><creator>O'Brien, Brendan</creator><creator>Donegan, Keith</creator><scope>EVB</scope></search><sort><creationdate>20200409</creationdate><title>MULTIPLE PATTERNING WITH LATE LITHOGRAPHICALLY-DEFINED MANDREL CUTS</title><author>Chen, Hsueh-Chung ; O'Toole, Martin ; O'Brien, Brendan ; Donegan, Keith</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020111676A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Hsueh-Chung</creatorcontrib><creatorcontrib>O'Toole, Martin</creatorcontrib><creatorcontrib>O'Brien, Brendan</creatorcontrib><creatorcontrib>Donegan, Keith</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Hsueh-Chung</au><au>O'Toole, Martin</au><au>O'Brien, Brendan</au><au>Donegan, Keith</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MULTIPLE PATTERNING WITH LATE LITHOGRAPHICALLY-DEFINED MANDREL CUTS</title><date>2020-04-09</date><risdate>2020</risdate><abstract>Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2020111676A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MULTIPLE PATTERNING WITH LATE LITHOGRAPHICALLY-DEFINED MANDREL CUTS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T03%3A44%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Chen,%20Hsueh-Chung&rft.date=2020-04-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020111676A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true