Method for Growing Very Thick Thermal Local Silicon Oxide Structures and Silicon Oxide embedded Spiral Inductors

A method is provided for fabricating thick silicon oxide structures, such as an embedded inductor. A Deep Reactive Ion Etch (DREI) etches the top silicon layer of a substrate to form high aspect ratio Si features, called trench texturing. The Si features are oxidized to form silicon oxide features....

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Akcasu, Osman Ersed
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!