MOS TRANSISTOR EMBEDDED SUBSTRATE AND SWITCHING POWER SUPPLY USING THE SAME
Disclosed herein is a MOS transistor embedded substrate that includes first and second MOS transistors each having a source electrode formed on one surface and a drain electrode formed on other surface, and an insulation resin layer in which the first and second MOS transistors are embedded such tha...
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creator | Abe, Toshiyuki CHIBA, Hironori |
description | Disclosed herein is a MOS transistor embedded substrate that includes first and second MOS transistors each having a source electrode formed on one surface and a drain electrode formed on other surface, and an insulation resin layer in which the first and second MOS transistors are embedded such that the source electrode of the first MOS transistor and the drain electrode of the second MOS transistor face a same direction and that the drain electrode of the first MOS transistor and the source electrode of the second MOS transistor face a same direction. |
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BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200402&DB=EPODOC&CC=US&NR=2020105677A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200402&DB=EPODOC&CC=US&NR=2020105677A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Abe, Toshiyuki</creatorcontrib><creatorcontrib>CHIBA, Hironori</creatorcontrib><title>MOS TRANSISTOR EMBEDDED SUBSTRATE AND SWITCHING POWER SUPPLY USING THE SAME</title><description>Disclosed herein is a MOS transistor embedded substrate that includes first and second MOS transistors each having a source electrode formed on one surface and a drain electrode formed on other surface, and an insulation resin layer in which the first and second MOS transistors are embedded such that the source electrode of the first MOS transistor and the drain electrode of the second MOS transistor face a same direction and that the drain electrode of the first MOS transistor and the source electrode of the second MOS transistor face a same direction.</description><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATION THEREOF</subject><subject>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD29Q9WCAly9Av2DA7xD1Jw9XVydXFxdVEIDnUKBoqHuCo4-gF54Z4hzh6efu4KAf7hrkFA2YAAn0iF0GCQUIiHq0Kwo68rDwNrWmJOcSovlOZmUHZzBWrTTS3Ij08tLkhMTs1LLYkPDTYyMDIwNDA1Mzd3NDQmThUAa2ku2w</recordid><startdate>20200402</startdate><enddate>20200402</enddate><creator>Abe, Toshiyuki</creator><creator>CHIBA, Hironori</creator><scope>EVB</scope></search><sort><creationdate>20200402</creationdate><title>MOS TRANSISTOR EMBEDDED SUBSTRATE AND SWITCHING POWER SUPPLY USING THE SAME</title><author>Abe, Toshiyuki ; 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subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
title | MOS TRANSISTOR EMBEDDED SUBSTRATE AND SWITCHING POWER SUPPLY USING THE SAME |
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