Semiconductor Device Including Trench Gate Structure and Manufacturing Method

An embodiment of a semiconductor device includes a trench gate structure extending from a first surface into a silicon carbide semiconductor body along a vertical direction. A body region of a first conductivity type adjoins a sidewall of the trench gate structure and includes a first body sub-regio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ploss, Reinhard, Aichinger, Thomas, Rupp, Roland, Schulze, Hans-Joachim
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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