Integrated Assemblies Having a Portion of a Transistor Gate Extending into a Recessed Region of a Semiconductor Base, and Methods of Forming Integrated Assemblies

Some embodiments include an integrated assembly with a semiconductor base having a horizontally-extending upper surface, and having a recessed region. A transistor gate is supported by the semiconductor base. The transistor gate has a first segment over the horizontally-extending upper surface, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Yokomichi, Masahiro
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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