SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor body including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The first and second semiconductor layers are alternately arranged in a first direction along a front surface of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Sugawara, Hideto, Ono, Syotaro, Ichijo, Hisao, Ohta, Hiroshi, Yamashita, Hiroaki
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a semiconductor body including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The first and second semiconductor layers are alternately arranged in a first direction along a front surface of the semiconductor body, and each include multiple portions arranged in a second direction directed from a back surface toward the front surface of the semiconductor body. The first and second semiconductor layers are configured such that, in an active region, a large/small relationship between amounts of the first conductivity type impurity and the second conductivity type impurity in the portions positioned at the same level in the second direction reverses at a center in the second direction of the second semiconductor layer, and in the terminal region, the large/small relationship reverses alternately in the portions arranged in the second direction.