MIDDLE OF THE LINE SELF-ALIGNED DIRECT PATTERN CONTACTS

The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain...

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Hauptverfasser:	XIE, Ruilong, NORTHROP, Gregory A, STEPHENS, Jason E, LIEBMANN, Lars W, CHANEMOUGAME, Daniel
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	XIE, Ruilong NORTHROP, Gregory A STEPHENS, Jason E LIEBMANN, Lars W CHANEMOUGAME, Daniel
description	The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	MIDDLE OF THE LINE SELF-ALIGNED DIRECT PATTERN CONTACTS
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