SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND COMPOSITE PROCESSING APPARATUS
According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified...
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creator | Otsubo, Kyo Inukai, Minako Sakurai, Hideaki Takai, Kosuke TANABE, Mana |
description | According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted. |
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The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. 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Thereafter, the solidified layer is melted.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgPDnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HfRUcAq6RgQ4AgUCw3WUXD0c1Fw9vcN8A_2xKGGh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEhwYbGRgZGJhbWBibOBoaE6cKAICaNNA</recordid><startdate>20200312</startdate><enddate>20200312</enddate><creator>Otsubo, Kyo</creator><creator>Inukai, Minako</creator><creator>Sakurai, Hideaki</creator><creator>Takai, Kosuke</creator><creator>TANABE, Mana</creator><scope>EVB</scope></search><sort><creationdate>20200312</creationdate><title>SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND COMPOSITE PROCESSING APPARATUS</title><author>Otsubo, Kyo ; Inukai, Minako ; Sakurai, Hideaki ; Takai, Kosuke ; TANABE, Mana</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020078834A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Otsubo, Kyo</creatorcontrib><creatorcontrib>Inukai, Minako</creatorcontrib><creatorcontrib>Sakurai, Hideaki</creatorcontrib><creatorcontrib>Takai, Kosuke</creatorcontrib><creatorcontrib>TANABE, Mana</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Otsubo, Kyo</au><au>Inukai, Minako</au><au>Sakurai, Hideaki</au><au>Takai, Kosuke</au><au>TANABE, Mana</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND COMPOSITE PROCESSING APPARATUS</title><date>2020-03-12</date><risdate>2020</risdate><abstract>According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING |
title | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND COMPOSITE PROCESSING APPARATUS |
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