HEATING PROCESSING APPARATUS AND HEATING PROCESSING METHOD
According to one embodiment, a controller calculates an estimation temperature profile, which represents a change with time in temperature of a substrate mounting surface in a state where a substrate is placed on a substrate stage, from warp amount information indicating a warp of the substrate. Fur...
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description | According to one embodiment, a controller calculates an estimation temperature profile, which represents a change with time in temperature of a substrate mounting surface in a state where a substrate is placed on a substrate stage, from warp amount information indicating a warp of the substrate. Further, the controller detects abnormality of a placement state of the substrate, on a basis of a difference between an actual measurement temperature profile, which represents a change with time in actual temperature measured by a temperature sensor in a state where the substrate is placed on the substrate stage, and the estimation temperature profile. |
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Further, the controller detects abnormality of a placement state of the substrate, on a basis of a difference between an actual measurement temperature profile, which represents a change with time in actual temperature measured by a temperature sensor in a state where the substrate is placed on the substrate stage, and the estimation temperature profile.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FUNCTIONAL ELEMENTS OF SUCH SYSTEMS MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PHYSICS REGULATING SEMICONDUCTOR DEVICES |
title | HEATING PROCESSING APPARATUS AND HEATING PROCESSING METHOD |
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